Fine Tune SIC MOSFET Gate Driver دیتاشیت

Fine Tune SIC MOSFET Gate Driver

مشخصات دیتاشیت

نام دیتاشیت Fine Tune SIC MOSFET Gate Driver
حجم فایل 568.877 کیلوبایت
نوع فایل pdf
تعداد صفحات 17

مشاهده دیتاشیت Fine Tune SIC MOSFET Gate Driver

دانلود دیتاشیت

سایر مستندات

SCT50N120 11 pages

مشخصات فنی

  • Manufacturer: STMicroelectronics
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 122nC @ 20V
  • Vgs (Max): +25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 400V
  • FET Feature: -
  • Power Dissipation (Max): 318W (Tc)
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: HiP247™
  • Package / Case: TO-247-3
  • Base Part Number: SCT50
  • detail: N-Channel 1200V 65A (Tc) 318W (Tc) Through Hole HiP247™

محصولات مشابه